Develop and optimize electroplating, seed etching, and PR stripping processes
Design and improve processes for TSV, RDL, Cu pillar, and micro bump formation
Evaluate and introduce new materials and equipment for plating/etching process integration
Conduct pre-production process validation and yield stabilization
Perform DOE planning and analyze experimental data using statistical tools (e.g.,SPC, Minitab, JMP)
Develop customized processes and provide technical support for customer programs
Set up equipment and optimize operating conditions in coordination with vendors
Troubleshoot quality issues across plating and etching processes
Support development of advanced packaging technologies including 2.5D, fan-out, and SiP
Qualifications:
Bachelor's degree or higher in Engineering or Science (e.g., Materials Science, Chemistry, Chemical Engineering, Electronics, Advanced Materials)
Minimum 3 years of hands-on experience in plating, etching, or stripping processes in semiconductor manufacturing
Fundamental understanding of advanced semiconductor fabrication and integration processes
Strong skills in experiment design, statistical data analysis (e.g., SPC, Minitab, JMP), and technical reporting
Proficiency in preparing technical documentation and delivering presentations
Ability to communicate technical content clearly in English (written and verbal)
Basic knowledge of semiconductor process equipment and materials
Experience in key back-end processes such as TSV, RDL, and micro bump
Knowledge of advanced packaging technologies including 2.5D, fan-out, and flip-chip
Familiarity with related processes such as photo, chip attach, and underfill
Proven experience in joint development projects with global customers
Hands-on collaboration with material or equipment suppliers for co-evaluation or integration
Expertise in process reliability testing (e.g., thermal cycling, HAST)
Experience in process automation or smart fab environments
Working proficiency in tools such as AutoCAD or ANSYS
* In-depth understanding of etch/strip conditions for back-end photoresist materials
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