Optimize the fabrication technology for transistors based on 2D transition metal dichalcogenides materials and metal oxides (ITO, IGZO)
Optimize the monolithic 3D integration technology for BEOL transistors
Develop fabrication processes using sputtering, electron-beam deposition, electron beam lithography, photolithography, dry and wet etching
Characterize materials and nanodevices using XRD, SEM, TEM, AFM, XPS, Raman spectroscopy, electrical parameter analysers
Work with colleagues from materials, data scientists, and process technologists.
The successful candidate will be part of a dynamic research team and will have the opportunity to collaborate with leading experts in the field. We offer a competitive salary package and a stimulating research environment with state-of-the-art facilities.
Interested applicants may send their motivation letter and CV via email to
Qualifications Candidate should meet at least 4 criteria from the following list:
Education: A Ph.D. in Electrical Engineering or a related field from a recognised University/Institute.
Experience in clean room nanofabrication and characterisation processes.
Experience in fabrication devices based on 2D and metal oxide materials.
Excellent written and spoken communication especially in writing and presentation skills.
Possess excellent communication and interpersonal skills to work with various stakeholders.
Meticulous, able to work well under pressure and commitment to meet tight deadlines.
More Information Location: Kent Ridge Campus Organization: College of Design and Engineering Department : Electrical and Computer Engineering Employee Referral Eligible: No Job requisition ID : 22101
Times Higher Education
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