The Energy Research Institute @ NTU (ERIAN) invites applications for the position of Research Scientist.
The Researcher will work on a project to conduct the R&D of GaN-based transistors on silicon substrates/engineered substrates (e.g. HEMT, MISHEMT, FinHEMT etc.).suitable for millimeter-wave (24-40GHz) low-voltage mobile communication applications.
Key Responsibilities:
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